Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor ...
ST has launched its fourth-generation STPOWER SiC MOSFETs, offering smaller size and greater efficiency for future EV traction inverters. Set to be available in 750-V and 1200-V classes, these devices ...
Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...
SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...
CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...
Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...
A range of four H-bridge MOSFET packages aims to simplify DC fan and CCFL inverter circuits by reducing both component count and PCB size in space-constrained ...
The silicon carbide (SiC) power semiconductor market is experiencing a sudden surge in demand amid growth for electric vehicles and other systems. But the demand also is causing a tight supply of ...
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