onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...
A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.
Gas insulation plays a central role in the design and operation of high voltage equipment by utilising dielectric gases to prevent undesired electrical discharges and ensure reliable performance.
AZoM on MSN
Why board-level insulators and dielectric materials are critical for safe, high-voltage PCB design
Mastering board-level insulation principles like clearance, creepage, and dielectric strength is key to preventing arcing and ensuring long-term dependability.
There are several characteristics when analyzing silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) capabilities for a power system. Silicon process is most familiar to designers as it has ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
The JEDEC 35 Standard (EIA/JESD35, Procedure for Wafer-Level Testing of Thin Dielectrics) describes voltage ramp (V-ramp) and current ramp (J-ramp) tests to monitor oxide integrity. These tests are ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results